We describe homoepitaxial growth and detailed in situ characterization of MgO(001). We have used, for the first time, high-speed Auger electron spectroscopy as a real-time probe of film composition during growth. Excellent short-range and long-range crystallographic order are achieved in films grown to a thickness of several hundred angstroms in the substrate temperature range of 450 degrees C to 750 degrees C. Moreover, the films become more laminar as the growth temperature increases, suggesting that MgO grows homoepitaxially by the step-flow growth mechanism at elevated temperature. The surface of films grown at 650 degrees and 750 degrees C are smoother than those obtained by cleaving MgO(001).
Revised: January 14, 2020 |
Published: November 1, 1994
Citation
Chambers S.A., T.T. Tran, and T.A. Hileman. 1994.Molecular Beam Homoepitaxial Growth of MgO(001).Journal of Materials Research 9, no. 11:2944 -2952.PNNL-SA-24353.doi:10.1557/JMR.1994.2944