The conduction and valence band offsets between amorphous LaAlO3 and silicon have been determined from X-ray photoelectron spectroscopy (XPS) measurements. These films, which are free of interfacial SiO2, were made by molecular beam deposition (MBD). The band line-up is type I with measured band offsets of 1.86 ± 0.1 eV for electrons and 3.23 ± 0.1 eV for holes. The band offsets are independent of the doping concentration in the silicon substrate as well as the LaAlO3 film thickness. These amorphous LaAlO3 films have a bandgap of 6.2 ± 0.1 eV.
Revised: March 17, 2004 |
Published: February 2, 2004
Citation
Edge L.F., D.G. Schlom, S.A. Chambers, E. Cicerrella, J.L. Freeouf, B. Hollander, and J. Schubert. 2004.Measurements of the Band Offsets Between Amorphous LaAIO3 and Silicon.Applied Physics Letters 84, no. 5:726-728.PNNL-SA-40144.