RBS/Channeling has been used to study the accumulation and isochronal recovery of disorder on the Si sublattice in 6H-SiC single crystals irradiated with 100 keV H2? ions at 100 and 300 K. The disorder at the damage peak shows a sigmoidal dependence on ion fluence for both irradiation temperatures. Dramatic simultaneous recovery is observed for the irradiation at 300 K. At low fluences, isochronal recovery occurs gradually over a wide temperature range. At high fluences, a near amorphous state is produced, and significant recovery does not occur. At intermediate fluences, damage recovery occurs more rapidly between 300 and 670 K. Further annealing at 1070 K results in the formation of blisters. Hydrogen depth profiles at 100 and 300 K are comparable and are well predicted by SRIM-97 simulations. Hydrogen release of about 30% is observed for SiC irradiated at 100 K and subsequently annealed at 1070 K for 20 min.
Revised: September 7, 2011 |
Published: May 10, 2000
Citation
Jiang W., W.J. Weber, S. Thevuthasan, and S.X. Wang. 2000.Irradiation Effects and Thermal Annealing Behavior in H2(+)-Implanted 6H-SiC.Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms 166-167.PNNL-SA-31479.