August 1, 2002
Journal Article

Interfacial Chemistry and the Performance of Bromine-etched CdZnTe Radiation Detector Devices

Abstract

The interfacial chemistry and composition of Pt electrodes sputter deposited on bromine-etched CdZnTe surfaces was studied by XPS, SIMS, AES, NRA and RBS. The interfacial composition of a functioning and a non-functioning CdZnTe detector shows significant differences. The degree of cation out-diffusion into the Pt overlayer and the in-diffusion of Pt into the CdZnTe correlate with the degree of oxidation found at the metal-semiconductor interface. Practically all the oxide present at the interface was found to be TeO2. The results suggest that the inter-diffusion of the atoms and associated charges contribute to stoichiometric variations at the metal-semiconductor interface and influence the electrical performance of the devices.

Revised: December 15, 2004 | Published: August 1, 2002

Citation

Rouse A.A., C. Szeles, J. Ndap, S. Soldner, K.B. Parnham, D.J. Gaspar, and M.H. Engelhard, et al. 2002. Interfacial Chemistry and the Performance of Bromine-etched CdZnTe Radiation Detector Devices. IEEE Transactions on Nuclear Science 49, no. 4:2005-2009. PNNL-SA-35472.