November 25, 2016
Journal Article

Interface Structure, Band Alignment, and Built-In Potentials at LaFeO3/n-SrTiO3 Heterojunctions

Abstract

We demonstrate that LaFeO3/n-SrTiO3(001) heterojunctions engineered to have opposite interface polarities exhibit very similar band offsets and built-in potentials within the LaFeO3 layer of the same sign. However, heterojunctions with the TiO20-LaO+ interface structure attract electronic charge from the n-STO substrate, whereas those with the SrO0-FeO2-1 interface structure do not. These results suggest that the latter would more effectively facilitate photogenerated electron-hole pair separation than the former, an important result for photoelectrochemical water splitting

Revised: January 17, 2017 | Published: November 25, 2016

Citation

Comes R.B., and S.A. Chambers. 2016. Interface Structure, Band Alignment, and Built-In Potentials at LaFeO3/n-SrTiO3 Heterojunctions. Physical Review Letters 117, no. 22:Article No. 226802. PNNL-SA-119599. doi:10.1103/PhysRevLett.117.226802