We have used high-energy x-ray photoelectron diffraction to investigate the structure of the first monolayer of epitaxial Si on GaAs(001)-(2x4). Analysis reveals that Si indiffusion occurs, resulting in Si occupancies of ~0.6, 0.3, and 0.1 in the first, second, and third layers, respectively. In addition, Si atoms are displaced from their respective bulk truncated coordinates by 0.5+-0.1 A along [110] in the first layer, and by 0.4+-0.1 A along [110] in the second layer. These results provide an explanation for the unusual band-offset behavior at AlAs/Si/GaAs heterojunctions.
Revised: August 15, 2019 |
Published: May 15, 1993
Citation
Chambers S.A., and T.T. Tran. 1993.Geometric Structure at the Si/GaAs(001) Interface: The Relationship to A1As/Si/GaAs Band Offsets.Physical Review. B, Condensed Matter and Materials Physics 47, no. 19:13023-13026.PNNL-SA-21989.doi:10.1103/PhysRevB.47.13023