March 4, 2013
Journal Article

Formation, stability and mobility of self-trapped excitations in NaI and NaI1-xTIx from first principles

Abstract

We present ab initio calculations studying the formation, mobility, and stability of self trapped excitons (STE) and self trapped holes (STH) and electrons in NaI and NaI(Tl). While previously proposed models assumed a highly mobile STE and a slower STH, we find that both carriers in pure NaI have similar mobilities, with an activation energy of about 0.2 eV. We propose an alternate interpretation of experimental record including a new migration mechanism for the STE. In the Tl-doped material excitons preferentially trap at dopants, inducing off center distortions that have a structure unlike an STE providing a mechanism for light emission at multiple wavelengths. The calculated results are generally in excellent agreement with available data.

Revised: March 6, 2013 | Published: March 4, 2013

Citation

Prange M.P., R.M. Van Ginhoven, N. Govind, and F. Gao. 2013. Formation, stability and mobility of self-trapped excitations in NaI and NaI1-xTIx from first principles. Physical Review B 87, no. 11:Article No. 115101. PNNL-SA-89847. doi:10.1103/PhysRevB.87.115101