This work has revealed several important properties of Al/Ti nanolayers in response to radiation damage. During maximum damage production initiated with 1.5-keV PKA, asymmetry in the point defects creation between the two dissimilar materials Al or Ti is observed with ~60% of vacancies are created in Al films while ~70% of interstitials are created in Al films. The excess interstitials in the Al films is a direct consequence of the preferential flux of displaced atoms in this nanolayered system. He irradiation experiments at a low dose of 1016 atoms/cm2 and at room temperature were performed to investigate the interface effects on radiation damage. The experimental data shows a formation of ~1-nm diameter bubbles in the Ti films near the interface. The results from the simulations and experiments seem to suggest that the bubbles formation is associated with the preferential flux of SIAs during the irradiation in that the He atoms impinge on the Ti films and displace the Ti atoms into the Al films. This is further supported by the location of the bubbles being near the interface and biased towards the direction of the irradiation.