The electronic energy loss for 4He, 7Li, 9Be, 12C, 16O, 19F and 28Si ions in self-supported SiO2 films has been measured in transmission geometry using a time of flight detection system over a continuous range of energies. SRIM (The Stopping and Range of Ions in Matter) predicts stopping power well for He and C ions within the stated uncertainties. Deviations around the Bragg peak for Li, Be and C ions and different energy dependence for Be, O, F and Si ions, as compared with the SRIM predictions, are observed. The results indicate that the modified Bohr formula is suitable for scaling the stopping number of heavy ions (except He, Li and Be) in the classical interaction regime. The measured electronic stopping powers are parameterized for easily implementation in other applications.
Revised: October 19, 2005 |
Published: September 5, 2005
Citation
Zhang Y., W.J. Weber, D.E. McCready, D.A. Grove, J. Jensen, and G. Possnert. 2005.Experimental Determination of Electronic Stopping for Ions in Silicon Dioxide.Applied Physics Letters 87, no. 10:104103.PNNL-SA-44616.