Epitaxial NbO2 thin films were synthesized on Al2O3 (0001) substrates via reactive bias target ion beam deposition. X-ray diffraction and Raman spectra were used to confirm the tetragonal phase of pure NbO2. Through XPS, it was found that there was a ~ 1.3 nm thick Nb2O5 layer on the surface and the bulk of the thin film was NbO2. The epitaxial relationship between NbO2 film and substrate was determined. Electrical transport measurement as a function of temperature showed that the conduction mechanism could be described by variable range hopping mechanism.
Revised: June 12, 2015 |
Published: January 20, 2015
Citation
Wang Y., R.B. Comes, S. Kittiwatanakul, S.A. Wolf, and J. Lu. 2015.Epitaxial niobium dioxide thin films by reactive-biased target ion beam deposition.Journal of Vacuum Science & Technology A: International Journal Devoted to Vacuum, Surfaces, and Films 33, no. 2:021516.PNNL-SA-106223.doi:10.1116/1.4906143