January 1, 2026
Journal Article

Energy barriers for H2 uptake and release by defects in boron nitride

Abstract

Density functional theory simulations (DFT) have been used in combination with the climbing image nudged elastic band method (CI-NEB) to determine the energy barriers required to dissociate H2 at four types of h-BN defects and evaluate the potential for reacted H species to hop to adjacent available sites. The defects were selected based on previous work in which ab initio thermodynamics was used to identify specific defects with optimal thermodynamics for reversible H2 storage, that is, the defects would dissociate molecular H2 while not binding H species too strongly so that hydrogen release is favorable. The four defects investigated are the N and B monovacancies, which only offer either B or N defective sites respectively, as well as larger cluster vacancy defects named 3V(1B2N) and hexagonal 6V(3B3N), which present a mixture of B and N defect sites available for H binding. While homogeneous H2 dissociation by B and N monovacancies have energy barriers larger than 0.4 eV, we found that mixed BN terminated defects have energy barrier lower than 0.4 eV for H2 dissociation. In particular, H2 dissociation by the hexagonal 6V(3B3N) defect, exclusively made of Frustrated Lewis Pairs (FLPs), is almost barrierless. The energy barrier for subsequent H hopping to available adjacent B or N sites of the defect were also calculated. It was found that the hopping of H species generally involves high energy barriers ranging from 0.26 eV to 2.57 eV. This work completes previous thermodynamic theoretical investigations and provides a more comprehensive picture of H2 reaction with defective h-BN for potential H2 storage and recovery.

Published: January 1, 2026

Citation

Sassi M.J., and S.T. Autrey. 2025. Energy barriers for H2 uptake and release by defects in boron nitride. Journal of Physical Chemistry C 129, no. 48:21334-21340. PNNL-SA-215213. doi:10.1021/acs.jpcc.5c05844