Single-crystal AlN films on SiC were irradiated at 145 K with 1.0 MeV Au+ ions to a wide range of ion fluences. The accumulation of disorder on both the Al and N sublattices in AlN has been investigated in situ using conventional Rutherford backscattering spectrometry (RBS) and non-RBS along the -axial channelling direction. The results suggest that a disorder saturation stage is attained following an initial disorder increase at intermediate doses (
Revised: September 13, 2007 |
Published: September 5, 2007
Citation
Jiang W., I. Bae, and W.J. Weber. 2007.Disordering and Dopant Behaviour in Au+ Ion-Irradiated AlN.Journal of Physics: Condensed Matter 19, no. 35:356207, 1-10.PNNL-SA-55092.doi:10.1088/0953-8984/19/35/356207