PNNL

Abstract

Changes in structure and composition resulting from oxygen deficiency can strongly impact the physical and chemical properties of transition metal oxides. However, it is extremely difficult to accurately characterize the oxygen deficiency levels and pinpoint how these materials properties change in response. In this paper, the effects of substrate strain and oxidizing power on the creation and distribution of oxygen defects in WO3 thin films are investigated in detail. An 18O2 isotope labeled time-of-flight secondary ion mass spectrometry (ToF-SIMS) study reveals that WO3-films grown on STO display a significantly larger oxygen vacancy gradient along the growth direction. This result is corroborated by scanning transmission electron microscopy (STEM) images which reveal a large number of defects present close to the interface to accommodate interfacial strain, leading to ordering of oxygen vacancies and formation of semi-aligned Magnéli phases. The strain is gradually released and tetragonal phase with much better crystallinity is observed at the film/vacuum interface. The changes in structure resulting from oxygen defect creation are shown to have a direct impact on the electronic and optical properties of the films.