We report a solution-processed approach for a p-type doped hole transport layer in organic light emitting devices (OLEDs). UV-vis-NIR absorption spectra identified the charge transfer between the donor and acceptor in the solution processed doped films. Single carrier device and field-effect transistor were utilized as test vehicles to study the charge transport property and extract important parameters such as bulk mobile carrier concentration and mobility. OLEDs with p-type doped hole transport layer showed significant improvement in power efficiency up to 30% at the optimal doping ratio. This approach has the great potential to reduce the power consumption for OLED solid state lighting while lowering the cost and boosting the throughput of its manufacturing.
Revised: June 25, 2013 |
Published: December 1, 2012
Citation
Swensen J.S., L. Wang, L. Wang, J.E. Rainbolt, P.K. Koech, E. Polikarpov, and D.J. Gaspar, et al. 2012.Characterization of solution processed, p-doped films using hole-only devices and organic field-effect transistors.Organic Electronics 13, no. 12:3085-3090.PNNL-SA-82955.doi:10.1016/j.orgel.2012.07.045