March 1, 2006
Journal Article

Carrier Dynamics in a-Fe2O3 (0001) Thin Films and Single Crystals Probed by Femtosecond Transient Absorption and Reflectivity

Abstract

Femtosecond transient reflectivity and absorption is used to measure the carrier lifetimes in a-Fe2O3 thin films and hematite single crystals. The results from the thin films show that initially excited hot electrons relax to the bandedge within 300 femtoseconds and then recombine with holes or trap within 5 pioseconds. The trapped electrons have a lifetime of hundreds of picoseconds. The trapped electrons have a lifetime of hundreds of picoseconds. Transient reflectivity measurements from hematite (a-Fe2O3) single crystals show similar but slightly faster dynamics. In hematite, the transient reflectivity displays oscillations due to the formation of longitudinal acoustic phonons generated following absorption of the ultrashort excitation pulse.

Revised: May 19, 2011 | Published: March 1, 2006

Citation

Joly A.G., J.R. Williams, S.A. Chambers, G. Xiong, W.P. Hess, and D.M. Laman. 2006. Carrier Dynamics in a-Fe2O3 (0001) Thin Films and Single Crystals Probed by Femtosecond Transient Absorption and Reflectivity. Journal of Applied Physics 99, no. 5:Article: 053521 (6 pages). PNNL-SA-45700.