We have used photoemission methods to directly measure the valence and conduction band offsets at SrTiO3/Si(001) interfaces, as prepared by molecular beam epitaxy. Within experimental error, the measured values are the same for growth on n- and p-Si, with the entire band discontinuity occurring at the valence band edge. In addition, band bending is much larger at the p-Si heterojunction than at the n-type heterojunction. Previously published threshold voltage behavior for these interfaces can now be understood in light of the present results.
Revised: May 16, 2002 |
Published: September 11, 2000
Citation
Chambers S.A., Y. Liang, Z. Yu, R. Droopad, J. Ramdani, and K. Eisenbeiser. 2000.Band Discontinuities at Epitaxial SrTiO3/Si(001)Heterojunctions.Applied Physics Letters 77, no. 11:1662-1664.PNNL-SA-33474.