February 20, 2020
Journal Article

Asymmetric Lattice Disorder Induced at Oxide Interfaces

Abstract

Control of order-disorder phase transitions is a fundamental materials science challenge, underpinning the development of energy storage technologies such as solid oxide fuel cells and batteries, ultra-high temperature ceramics, and durable nuclear waste forms. At present, the development of promising complex oxides for these applications is hindered by a poor understanding of how interfaces affect lattice disordering processes and defect transport. Here we explore the evolution of local disorder in ion-irradiated La2Ti2O7 / SrTiO3 thin film heterostructures using a combination of high-resolution scanning transmission electron microscopy (STEM), position-averaged convergent beam electron diffraction (PACBED), electron energy loss spectroscopy (STEM-EELS), and ab initio theory calculations. We observe highly non-uniform lattice disordering driven by asymmetric oxygen vacancy formation across the interface. Our calculations indicate that this asymmetry results from differences in the polyhedral connectivity and vacancy formation energies of the two interface components, suggesting ways to manipulate lattice disorder in functional oxide heterostructures.

Revised: May 11, 2020 | Published: February 20, 2020

Citation

Spurgeon S.R., T.C. Kaspar, V. Shutthanandan, J. Gigax, L. Shao, and M. Sassi. 2020. Asymmetric Lattice Disorder Induced at Oxide Interfaces. Advanced Materials Interfaces 7, no. 8:Article No. 1901944. PNNL-SA-148989. doi:10.1002/admi.201901944