Transparent, conducting p-La1-xSrxCrO3 epitaxial layers were deposited on Nb-doped SrTiO3(001) by oxygen-assisted molecular beam epitaxy to form structurally coherent p-n junctions. X-ray photoelectron spectroscopy reveals a type II or “staggered” band alignment, with valence and conduction band offsets of 2.0 eV and 0.9 eV, respectively. Diodes fabricated from these heterojunctions exhibit rectifying behavior, and the I-V characteristics are different from those for traditional semiconductor p-n junctions. A rather large ideality factor is ascribed to the complex nature of the interface.
Revised: May 1, 2019 |
Published: August 8, 2017
Citation
Du Y., C. Li, K.L. Zhang, M.E. McBriarty, S.R. Spurgeon, H.S. Mehta, and D. Wu, et al. 2017.An all-perovskite p-n junction based on transparent conducting p-La1-xSrxCrO3 epitaxial layers.Applied Physics Letters 111, no. 6:063501.PNNL-SA-124623.doi:10.1063/1.4997410