Ion-beam-induced disordering in single crystals of 6H-SiC has been investigated for a wide range of ion species (from H? to Au2?) using in situ ion-channeling methods. Silicon carbide is readily amorphized below room temperature with all ions. The rate of ion-beam-induced disordering decreases with decreasing ion mass and with increasing temperature. Analysis of limited data suggests that the activation energy for dynamic recovery during irradiation below 300 K is on the order of 0.1 eV. Thermal annealing indicates similar three-stage recovery on both the Si and C sublattices, which suggests similar recovery processes and activation energies. The activation energies for thermal recovery on the Si sublattice are estimated to be 0.3 ? 0.15 eV (Stage I), 1.3 ? 0.25 eV (Stage II), and 1.5 ? 0.3 eV (Stage III).
Revised: November 10, 2005 |
Published: June 4, 2001
Citation
Weber W.J., W. Jiang, and S. Thevuthasan. 2001.Accumulation, Dynamic Annealing and Thermal Recovery of Ion-Beam-Induced Disorder in Silicon Carbide.Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms 175-177.PNNL-SA-33657.