This invention relates to increasing the ion path length in devices of planar geometry. In these devices, ions are usually manipulated between two of nearly parallel surfaces where the electric field is applied to each surface. The ion path length can be increased by moving ions from the first plane, where the first pair of surfaces manipulate ions, unto a second plane where the second pair of surfaces manipulate surfaces. Ions are urged to move from the first level of ion manipulation to the second level of ion manipulation through a transfer region the contains an orifice through which ions move. The orifice is located orthogonal to the first ion motion. Ions turn from the first direction into the orifice by applying one or more moving or static electric fields that cause ions to move from their primary path in the first level into the orifice and into the second level. A device that contains many levels (more than or equal 2 levels) can be then constructed. We also disclose a method to construct such a device to avoid ion losses and to simplify the assembly of such devices.