We report on CdS/CdTe photovoltaic devices that contain a thin Ta2O5 film deposited onto the CdS window layer by sputtering. We show that for thicknesses below 5 nm, Ta2O5 films between CdS and CdTe positively affect the solar cell performance, improving JSC, VOC, and the cell power conversion efficiency despite the insulating nature of the interlayer material. Using the Ta2O5 interlayer, a VOC gain of over 100 mV was demonstrated compared to a CdTe/CdS baseline. Application of a 1nm Ta2O5 interlayer enabled the fabrication of CdTe solar cells with extremely thin (less than 30 nm) CdS window layers. The efficiency of these cells exceeded that of a base line cell with 95 nm of CdS.
Revised: August 13, 2014 |
Published: May 5, 2012
Citation
Lemmon J.P., E. Polikarpov, W.D. Bennett, and L. Kovarik. 2012.Thin Metal Oxide Films to Modify a Window Layer in CdTe-Based Solar Cells for Improved Performance.Applied Physics Letters 100, no. 21:Article No, 213908.PNNL-SA-86428.doi:10.1063/1.4722921