We studied the dopant concentration distribution and conductivity in ZnO:Mn films grown by metalorganic chemical vapor deposition (MOCVD). The ion beam, surface and microstructural properties of undoped ZnO films were compared with Mn-doped ZnO films. Suppression of ZnO conductivity was noticed up to ~ 4.5 atom% Mn doping. The presence of Mn2+, confirmed by X-ray photoelectron spectroscopy (XPS), is correlated with the reduction in conductivity. No major change in the activation energy (~40 meV) and a reduction in the Zn/O ratio as a function of Mn concentration in highly sensitive proton induced X-ray emission (PIXE) technique also support this hypothesis. We discuss our results from a view point of homogeneous Mn distribution, elemental XPS ratio offsets and secondary phase formations in ZnO films.
Revised: April 7, 2011 |
Published: January 15, 2009
Citation
Hlaing Oo W., L.V. Saraf, M.H. Engelhard, V. Shutthanandan, L. Bergman, J. Huso, and M.D. Mccluskey. 2009.Suppression of conductivity in Mn-Doped ZnO Thin Films.Journal of Applied Physics 105, no. 1:013715.PNNL-SA-61963.doi:10.1063/1.3063730