Recent studies have reported room-temperature ferromagnetism (FM) in Fe doped SnO2. The FM in semiconductors due to transition metal doping has been argued to be carrier mediated. Fluorine (F) doping in sure SnO2 has been reported to significantly increase the carrier concentration. In this work, we investigated the role of F doping in the range from 0% to 0.79% on the FM of chemically synthesized single phase Sn1xFexO2 using X-ray diffraction, UV-Vis spectrophotometry, particle-induced X-ray emission, particle-induced gamma ray emission and magnetometry. The saturation magnetization Ms (0.03 emu/g) increased by a factor of 2.5 and the lattice volume and band gap energy decreased by 0.35 A3 and 0.2eV, respectively, with 0.67% F doping (F/Sn atom %) compared to the sample without any fluorine.
Revised: April 7, 2011 |
Published: February 7, 2007
Citation
Thurber A., J. Hays, K.M. Reddy, V. Shutthanandan, and A. Punnoose. 2007.Fluorine doping in dilute magnetic semiconductor Sn1–xFexO2.Journal of Materials Science 18, no. 11:1151-1155.PNNL-SA-54014.doi:10.1007/s10854-007-9145-4