Electron-beam-induced recrystallization of irradiation-induced amorphous Sr2Nd8(SiO4)6O2 is investigated in situ using transmission electron microscopy with 200 keV electrons at room temperature. Epitaxial recrystallization is observed from both the amorphous/crystalline interface and the surface, and the recrystallization is more pronounced with increasing electron-beam flux. Since the temperature increase induced by electron-beam irradiation is estimated to be less than 7 K and maximum energies transferred to target atoms are below the displacement energies, ionization-induced processes are considered to be the primary mechanisms for the solid-phase epitaxial recrystallization observed in the present study.
Revised: January 19, 2007 |
Published: January 10, 2007
Citation
Bae I., Y. Zhang, W.J. Weber, M. Higuchi, and L. Giannuzzi. 2007.Electron-beam induced recrystallization in amorphous apatite.Applied Physics Letters 90, no. 2:021912, 1-3.PNNL-SA-53041.doi:10.1063/1.2430779