Ti-doped hematite (a-Ti0.04Fe1.96O3) film grown over patterned a-Cr2O3 buffer layer on a-Al2O3(0001) substrate was characterized with synchrotron X-ray microdiffraction. The film was grown by oxygen plasma assisted molecular beam epitaxy method. The film growth mode was correlated to buffer layer boundary
and Ti concentration variation. Epitaxial a-Ti0.04Fe1.96O3 film was formed on bare substrate adjacent to the buffer layer. The epitaxial film was connected laterally to a strain-relaxed epitaxial a-Ti0.04Fe1.96O3 film grown on the buffer layer. On bare a-Al2O3 substrate with diminished Ti concentration only a small portion of a-TixFe1-xO3 film was epitaxial either as coherent to the substrate or strain-relaxed form.
Revised: October 4, 2011 |
Published: July 1, 2011
Citation
Kim C. 2011.X-ray Microdiffraction from a-Ti0.04Fe1.96O3 (0001) Epitaxial Film Grown Over a-Cr2O3 Buffer Layer Boundary.Thin Solid Films 519, no. 18:5996-5999. doi:10.1016/j.tsf.2011.03.130