In this article we report on the carrier velocity of polycrystalline pentacene transistors as a function of electric field in both quasistatic and non-quasistatic regimes. We performed a series of measurements on devices with a range of channel lengths. At moderate electric fields (
Revised: September 14, 2010 |
Published: June 15, 2010
Citation
Cobb B., L. Wang, L. Dunn, and A. Dodabalapur. 2010.Velocity-Field Characteristics of Polycrystalline Pentacene Field-Effect Transistors.Journal of Applied Physics 107, no. 12:Art. No. 124503.PNNL-SA-68408.