Silicon based nanowires have been grown from commercial silicon powders under conditions of differing oxygen and carbon activities. Nanowires grown in the presence of carbon sources consisted of a crystalline SiC core with an amorphous SiOx shell. The thickness of SiOx shell decreased as the oxygen concentration in the precursor gases was lowered. Nanowires grown in a carbon-free environment consisted of amorphous silicon oxide with a typical composition of SiO1.8. The growth rate of nanowires decreased with decreasing oxygen content in the precursor gases. SiO1.8 nanowires exhibited an initial discharge capacity of ~ 1,300 mAh/g and better stability than those of silicon powders. A Vapor Induced Solid-Liquid-Solid (VI-SLS) mechanism is proposed to explain the nanowire growth (including silicon and other metal based nanowires) from powder sources. In this approach, both a gas source and a solid powder source are required for nanowire growth. This mechanism is consistent with experimental observations and can also be used to guide the design and growth of other nanowires.
Revised: June 28, 2010 |
Published: March 10, 2010
Citation
Zhang J., J. Liu, D. Wang, D. Choi, L.S. Fifield, C.M. Wang, and G. Xia, et al. 2010.Vapor-Induced Solid-Liquid-Solid Process for Silicon-based Nanowire Growth.Journal of Power Sources 195, no. 6 SP ISS:1691-1697.PNNL-SA-67705.