March 10, 2010
Journal Article

Vapor-Induced Solid-Liquid-Solid Process for Silicon-based Nanowire Growth

Abstract

Silicon based nanowires have been grown from commercial silicon powders under conditions of differing oxygen and carbon activities. Nanowires grown in the presence of carbon sources consisted of a crystalline SiC core with an amorphous SiOx shell. The thickness of SiOx shell decreased as the oxygen concentration in the precursor gases was lowered. Nanowires grown in a carbon-free environment consisted of amorphous silicon oxide with a typical composition of SiO1.8. The growth rate of nanowires decreased with decreasing oxygen content in the precursor gases. SiO1.8 nanowires exhibited an initial discharge capacity of ~ 1,300 mAh/g and better stability than those of silicon powders. A Vapor Induced Solid-Liquid-Solid (VI-SLS) mechanism is proposed to explain the nanowire growth (including silicon and other metal based nanowires) from powder sources. In this approach, both a gas source and a solid powder source are required for nanowire growth. This mechanism is consistent with experimental observations and can also be used to guide the design and growth of other nanowires.

Revised: June 28, 2010 | Published: March 10, 2010

Citation

Zhang J., J. Liu, D. Wang, D. Choi, L.S. Fifield, C.M. Wang, and G. Xia, et al. 2010. Vapor-Induced Solid-Liquid-Solid Process for Silicon-based Nanowire Growth. Journal of Power Sources 195, no. 6 SP ISS:1691-1697. PNNL-SA-67705.