Electronic band structures of single-walled silicon carbide nanotubes are studied under uniaxial strain using first principles calculations. The band structure can be tuned by mechanical strain in a wide energy range. The band gap decreases with uniaxial tensile strain, but initially increases with uniaxial compressive strain and then decreases with further increases in compressive strain. These results may provide a way to tune the electronic structures of silicon carbide nanotubes, which may have promising applications in building nanodevices.
Revised: September 10, 2008 |
Published: May 9, 2008
Citation
Wang Z., X.T. Zu, H.Y. Xiao, F. Gao, and W.J. Weber. 2008.Tuning the band structures of single walled silicon carbide nanotubes with uniaxial strain: a first principles study.Applied Physics Letters 92, no. 18:183116.PNNL-SA-60194.doi:10.1063/1.2924307