ZnO grown on ?-Al2O3 (0001) generally possesses an orientation such that ?-Al2O3 (0001)//ZnO(0001) and two in-plane domains nucleate such that: ?-Al2O3 [11-20]//ZnO[11-20] and/or ?-Al2O3 [11-20]//ZnO[10-10]. In this paper, we report a new growth mode for ZnO grown on ?-Al2O3 (0001) using MOCVD. We find that ?-Al2O3 [11-20]//ZnO[10-10] but the (0001) plane of ZnO is tilted relative to the (0001) plane of ?-Al2O3 such that ZnO(0001) is almost parallel to the ?-Al2O3 (-1104) plane. This orientation reduces the extent of lattice mismatch. The interface between ZnO and ?-Al2O3 is abrupt and possesses periodic dislocations.
Revised: August 6, 2010 |
Published: January 1, 2008
Citation
Wang C.M., L.V. Saraf, T.L. Hubler, and P. Nachimuthu. 2008.Tilted domain growth of metalorganic chemical vapor (MOCVD)-grown ZnO(0001)on a-Al2O3(0001).Journal of Materials Research 23, no. 1:13-17.PNNL-SA-56725.