Thermally Grown Si3N4 Thin Films on Si (100): Surface and Interfacial Composition

April 3, 2021

Journal Article

Thermally Grown Si3N4 Thin Films on Si (100): Surface and Interfacial Composition

Abstract

Synchrotron photoemission measurements of the Si(2p) and N(1s) levels have been made on Si3n4 thin films grown in-situ by high temperature reaction of Si(100) with NH3.

Published: April 3, 2021

Citation

Peden C.H., J. Rogers, Jr., N.D. Shinn, K.B. Kidd, K.L. Tsang, and K.L. Tsang. 1993. Thermally Grown Si3N4 Thin Films on Si (100): Surface and Interfacial Composition. Physical Review. B, Condensed Matter 47, no. 23:15622-15629. PNNL-SA-22066. doi:10.1103/PhysRevB.47.15622