June 9, 2021
Journal Article

Temperature and Dose Dependence of Ion-Beam-Induced Amorphization in Alpha-SiC

Abstract

Single crystal a-SiC with [0001] orientation has been irradiated at 170, 300, and 370 K with 360 keV Ar2+ ions at an incident angle of 25° and the damage accumulation process followed in situ by Rutherford backscattering spectroscopy in channeling geometry (RBS/C) along [102].

Published: June 9, 2021

Citation

Weber W.J., N. Yu, L.M. Wang, and N.J. Hess. 1997. "Temperature and Dose Dependence of Ion-Beam-Induced Amorphization in Alpha-SiC." Journal of Nuclear Materials 244, no. 3:258-265. PNNL-SA-28067. doi:10.1016/S0022-3115(96)00742-8