Thin film of silicon germanium (Si1-xGex) with tailored composition was grown on Si (100) substrate at 650oC in an ultrahigh vacuum molecular beam epitaxy system. The nominal x-value is ranged from 0 to 0.14. The quality of the film was investigated by Rutherford backscattering spectrometry (RBS) in random and channeling geometries, glancing angle x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), high resolution transmission electron microscopy (HRTEM), energy dispersive x-ray spectroscopy (EDX), and atomic force microscopy (AFM). RBS/Channeling measurements indicate that the strain associated with lattice mismatch is compressive in the film. Both RBS and EDX analyses indicate the compositional graded incorporation of Ge in the film with x ranging from 0 to 0.14. The film shows island growth with each island centering around an interface dislocation.
Revised: January 10, 2008 |
Published: August 1, 2007
Citation
Yu Z., Y. Zhang, C.M. Wang, V. Shutthanandan, I. Lyubinetsky, M.H. Engelhard, and L.V. Saraf, et al. 2007.Synthesis and Characterization of Compositionally Graded Si1-xGex Layers on Si substrate.Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms 261, no. 1-2:723-726.PNNL-SA-52048.