The defect creation at low energy events was studied using density functional theory molecular dynamics simulations in silicon carbide nanotubes, and the displacement threshold energies determined exhibit a dependence on sizes, which decrease with decreasing diameter of the nanotubes. The Stone-Wales (SW) defect, which is a common defect configurations induced through irradiation in nanotubes, has also been investigated, and the formation energies of the SW defects increase with increasing diameter of the nanotubes. The mean threshold energies were found to be 23 and 18 eV for Si and C in armchair (5,5) nanotubes.
Revised: July 9, 2010 |
Published: October 15, 2009
Citation
Wang Z., F. Gao, J. Li, X.T. Zu, and W.J. Weber. 2009.Stone-Wales Defects Created by Low Energy Recoils in Single-walled Silicon Carbide Nanotubes.Journal of Applied Physics 106, no. 8:Art. No. 084305.PNNL-SA-68355.doi:10.1063/1.3238307