Growth of Ga-doped ZnO by pulsed laser deposition at 200 ?C in an ambient of Ar and H2 produces a resistivity ? of ~ 1.5 x 10-4 ?-cm, stable to 500 ?C. Annealing on Zn foil reduces ? to ~ 1.2 x 10-4 ?-cm, one of the lowest values ever reported. The key is reducing the Zn-vacancy acceptor concentration NA to 5 x 1019, only 3% of the Ga-donor concentration ND of 1.6 x 1021 cm-3, with ND and NA determined from a degenerate mobility theory. The plasmonic wavelength is 1060 nm, further bridging the gap between metals and semiconductors.
Revised: August 18, 2014 |
Published: September 4, 2012
Citation
Look D.C., T.C. Droubay, and S.A. Chambers. 2012.Stable highly conductive ZnO via reduction of Zn vacancies.Applied Physics Letters 101, no. 10:Article No. 102101.PNNL-SA-89053.doi:10.1063/1.4748869