In-Situ IR and Spectroscopic Ellipsometric Analysis of Growth Process and Structural Properties of Ti1-xNbxO2 Thin Films by MOCVD

June 1, 1999

Journal Article

In-Situ IR and Spectroscopic Ellipsometric Analysis of Growth Process and Structural Properties of Ti1-xNbxO2 Thin Films by MOCVD

Abstract

Describes the characterization of the formation process of Ti1-xNbxO2 films with Nb concentration up to 38 at.% by metalorganic chemical vapor deposition using titanium tetraisopropoxide and pentaethoxy niobium as precursors using in-situ FTIR spectroscopy and spectroscopic elipsometry.

Revised: August 11, 1999 | Published: June 1, 1999

Citation

Gao Y. 1999. In-Situ IR and Spectroscopic Ellipsometric Analysis of Growth Process and Structural Properties of Ti1-xNbxO2 Thin Films by MOCVD. Thin Solid Films 346, no. 1-2:73-81. PNNL-SA-30088.