Single crystals of a-SiC with [0001] orientation have been irradiated at 300 K with 360 keV Ar2+ ions at an incident angle of 25°. The damage accumulation in one sample was followed in situ by Rutherford backscattering spectroscopy in channeling geometry (RBS/C) along the [102] direction until the aligned backscattering yield reached the random level throughout the irradiated layer at a fluence of 8 Ar2+ ions/nm2. Six other samples were irradiated at fluences ranging from 1 to 6 Ar2+ ions/nm2, and the damage accumulation was characterized ex situ by RBS/C along the [0001] direction. The relative disorder, as measured by RBS/C, increased with ion fluence; however, the observed rate of disordering was much lower when measured ex situ along the [0001] direction.
Revised: August 23, 2019 |
Published: May 2, 1997
Citation
Weber W.J., and N. Yu. 1997.In Situ and Ex Situ Investigation of Ion-Beam-Induced Amorphization in Alpha-SiC.Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms 127/128.PNNL-SA-28177.doi:10.1016/S0168-583X(96)00883-X