Rutherford backscattering spectrometry (RBS) and nuclear reaction analysis (NRA) in channeling geometry have been combined to study the accumulation and recovery of Au2?-induced disorder on both sublattices in 6H-SiC. Conventional He? RBS/channeling is used to analyze the Ga disorder and Au profiles in Au2?-implanted GaN and the disorder on both the Sr and Ti sublattices in Au2?-implanted SrTiO3. Results on the disorder accumulation in these materials, disorder recovery in 6H-SiC, as well as the mobility of Au implants in GaN are presented and discussed.
Revised: May 20, 2004 |
Published: July 6, 2001
Citation
Jiang W., W.J. Weber, S. Thevuthasan, and V. Shutthanandan. 2001.Simultaneous Analysis of Multiple Elements by Combined Ion-Beam Methods. In Application of Accelerators in Research and Industry. Sixteenth International Conference, 1-5 Nov. 2000, Denton, TX., edited by J. L. Duggan and I.L. Morgan, 447-450. Woodbury, New York:American Institute of Physics.PNNL-SA-33771.