May 16, 2011
Journal Article

Serial and parallel Si, Ge, and SiGe direct-write with scanning probes and conducting stamps

Abstract

Precise materials integration in nanostructures is fundamental for future electronic and photonic devices. We demonstrate Si, Ge, and SiGe nanostructure direct-write with deterministic size, geometry, and placement control. The biased probe of an atomic force microscope (AFM) reacts diphenylsilane or diphenylgermane to direct-write carbon-free Si, Ge, and SiGe nano and heterostructures. Parallel directwrite is available on large areas by substituting the AFM probe with conducting microstructured stamps. This facile strategy can be easily expanded to a broad variety of semiconductor materials through precursor selection.

Revised: June 27, 2011 | Published: May 16, 2011

Citation

Vasko S.E., A. Kapetanovic, V. Talla, M.D. Brasino, Z. Zhu, A. Scholl, and J.D. Torrey, et al. 2011. Serial and parallel Si, Ge, and SiGe direct-write with scanning probes and conducting stamps. Nano Letters 11, no. 6:2386-2389. PNNL-SA-78454. doi:10.1021/nl200742x