Nanostructured materials are generally believed to be more radiation resistant. This study reports on Au ion induced amorphization in nanocrystalline 3C-SiC, characterized using x-ray diffraction, transmission electron microscopy and Raman spectroscopy. Full amorphization at room temperature occurs at a comparable dose to that for bulk SiC single crystals. The behavior is attributed to a high ion flux and sluggish migration of point defects produced during irradiation. The results may have a significant implication of using nanophased SiC in extremely high radiation environments.
Revised: July 25, 2020 |
Published: October 9, 2009
Citation
Jiang W., H. Wang, I. Kim, I. Bae, G. Li, P. Nachimuthu, and Z. Zhu, et al. 2009.Response of Nanocrystalline 3C Silicon Carbide to Heavy-Ion Irradiation.Physical Review. B, Condensed Matter 80, no. 16:Art. No.161301(R).PNNL-SA-66487.doi:10.1103/PhysRevB.80.161301