July 1, 2011
Journal Article

Realization of Critical Distance during the Interplay between Re-deposition and Secondary sputtering from Milling of Angular Side Wall with a Focused Ion Beam

Abstract

In-situ observation of critical distance (CD), a distance where secondary sputtering effects diminish and re-deposition starts to dominate is realized during controlled focused ion beam (FIB) sputtering. The experiments were performed on representative high density Nialloy and lower density porous Ni-YSZ. For the Ni-alloy case, it was observed that linear extrapolation of re-deposited layer width coincides with CD suggesting uniform sputtering and re-deposition effects. Estimation related to percentage of re-deposition from FIB etched layer at an angle of 50 degrees between the lower membrane and FIB etched side wall clearly demonstrated dominant secondary etching, neutralizing sputtering/redeposition and dominant re-deposition regions. Although the angle between FIB etched angular side wall and re-deposited/etched membrane adds some complication, the suggested overall experimental approach would substantially simplify to develop more realistic models than previously considered complex situations dealing with interplay between the re-deposition and secondary etching.

Revised: October 7, 2011 | Published: July 1, 2011

Citation

Saraf L.V. 2011. Realization of Critical Distance during the Interplay between Re-deposition and Secondary sputtering from Milling of Angular Side Wall with a Focused Ion Beam. Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms 269, no. 13:1540-1547. PNNL-SA-79425. doi:10.1016/j.nimb.2011.04.111