Wurtzite InxGa1-xN (x = 0.32, 0.47, 0.7, 0.8 and 0.9) films grown on the GaN epilayers were irradiated with 5 MeV Xe ions to fluences ranging from 3E12 to 6E13 cm-2 at room temperature (RT) and 773 K. Raman spectroscopy was used to study the effects on structure and electron carrier concentration in the irradiated materials. The results show that the irradiation induces lattice relaxation and reduction of the electron carrier concentration in the films, the extent of which increases and decreases, respectively, with increasing In content x in InxGa1-xN. Compared to RT irradiation, significant simultaneous defect recovery was observed during irradiation at 773 K up to a fluence of 3E13 cm-2. Further irradiation to 6E13 cm-2 leads to delamination of the In-rich InxGa1-xN films (x = 0.7, 0.8 and 0.9) from the GaN epilayers.
Revised: February 3, 2021 |
Published: January 15, 2018
Citation
Ai W., L. Zhang, W. Jiang, J. Peng, and T. Wang. 2018.Raman study of InxGa1-xN (x = 0.32-0.9) films irradiated with Xe ions at room temperature and 773 K.Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms 415.PNNL-SA-126284.doi:10.1016/j.nimb.2017.11.003