Phase-field approach is used to predict the thickness effect on the domain stability in ferroelectric thin films. The strain relaxation mechanism and critical thickness for dislocation formation from both Matthews-Blakeslee (MB) and People-Bean (PB) models are employed. Thickness - strain domain stability diagrams are obtained for PbTiO3 thin films under different strain relaxation models. The relative domain fractions as a function of film thickness are also calculated and compared with experiment measurements in PbTiO3 thin films grown on SrTiO3 and KTaO3 substrates.
Revised: August 28, 2013 |
Published: May 6, 2012
Citation
Sheng G., J. Hu, J. Zhang, Y. Li, Z.K. Liu, and L. Chen. 2012.Phase-field simulations of thickness-dependent domain stability in PbTiO3 thin films.Acta Materialia 60, no. 8:3296-3301.PNNL-SA-90776.doi:10.1016/j.actamat.2012.03.003