Recent advances in the growth and doping of CdZnTe using low-pressure Bridgman methods have allowed for the production of high-resistivity crystals. In this work, we present electrical characterization measurements on samples of CdZnTe grown at Washington State University. We demonstrate the capabilities of the CdZnTe material to perform as radiation detectors and correlate detector performance with crystal growth conditions.
Revised: March 21, 2008 |
Published: October 23, 2005
Citation
Seifert C.E., J.L. Orrell, D.E. Coomes, B.L. Lamarche, M. Bliss, K.G. Lynn, and K.A. Jones, et al. 2005.Performance of CdZnTe detectors grown by low-pressure Bridgman. In IEEE Nuclear Science Symposium Conference Record, 3, 1383-1385. Piscataway, New Jersey:IEEE.PNNL-SA-47448.doi:10.1109/NSSMIC.2005.1596577