Single-crystal wafers of 6H-SiC were irradiated at 300 K with 2 MeV Au2? ions over fluences ranging from 0.029 to 0.8 ions/nm2. The accumulated disorder on both the Si and C sublattices in the irradiated specimens has been studied in situ using 0.94 MeV D? channeling along , and axes. At low doses, results show that some of the Si and C defects are well aligned with the axis with more C defects shielded by the atomic rows; a higher level of C disorder is observed, which is consistent with a smaller threshold displacement energy on the C sublattice. There is only a moderate recovery of disorder, produced at and below 0.058 Au2?/nm2, during the thermal annealing at 570 K; similar behavior is observed in the higher-dose samples annealed between 720 and 870 K. The results suggest the presence of defect clusters and amorphous domains formed during the Au2? irradiation. Reordering process at 570 K in the weakly damaged 6H-SiC (0.12 Au2?/nm2, 300 K) appears to occur closely along the direction.
Revised: May 20, 2004 |
Published: April 25, 2001
Citation
Jiang W., W.J. Weber, S. Thevuthasan, and V. Shutthanandan. 2001.Multi-Axial Channeling Study of Disorder in Gold Implanted 6H-SiC. In Silicon Carbide - Materials, Processing, and Devices. Symposium, 27-29 Nov. 2000, Boston, MA, Materials Research Society Symposium Proceedings, edited by AK Agarwal, JA Cooper, Jr., E Janzen, M Skowronski, 640, H6.3(1-6). Warrendale, Pennsylvania:Materials Research Society.PNNL-SA-33972.