September 2, 2010
Journal Article

Mid-Gap Electronic States in Zn1 xMnxO

Abstract

Electronic absorption, magnetic circular dichroism, photoconductivity, and valence-band X-ray photoelectron (XPS) spectroscopic measurements were performed on epitaxial Zn1 xMnxO films to investigate the origin of the new mid-gap band that appears upon introduction of Mn2+ into the ZnO lattice. Absorption and MCD spectroscopies reveal Mn2+-related intensity at energies below the first excitonic transition of ZnO, tailing well into the visible energy region, with an onset at ~2.2 eV. Photoconductivity measurements show that excitation into this visible band generates mobile charge carriers, consistent with assignment as a Mn2+/3+ photoionization transition. XPS measurements reveal the presence of occupied Mn2+ levels just above the valence-band edge, supporting this assignment. Magnetic circular dichroism measurements additionally show a change in sign and large increase in magnitude of the excitonic Zeeman splitting in Zn1 xMnxO relative to ZnO, suggesting that sp-d exchange in Zn1 xMnxO is not as qualitatively different from those in other II-VI diluted magnetic semiconductors as has been suggested. The singular electronic structure feature of Zn1 xMnxO is its Mn2+/3+ ionization level within the gap, and the influence of this level on other physical properties of Zn1 xMnxO is discussed.

Revised: August 18, 2014 | Published: September 2, 2010

Citation

Johnson C.A., K.R. Kittilstved, T.C. Kaspar, T.C. Droubay, S.A. Chambers, G. Salley, and D.R. Gamelin. 2010. Mid-Gap Electronic States in Zn1 xMnxO. Physical Review B 82, no. 11:Art. No. 115202. PNNL-SA-73651.