Si nanowires (NWs) with axial p-n junctions were grown by the vapor-liquid-solid method. Transmission electron microscopy and electron holography were used to characterize the microstructure and electrostatic properties. Measurement of the potential profile showed the presence of a p-n junction with a height of 1.0±0.3V. A Schottky barrier was observed at the end of the NW due to the Au catalyst particle. Comparison with simulations indicated dopant concentrations of 1019cm-3 for donors and 1017cm-3 for acceptors. These results confirm the benefit of combining off-axis electron holography with simulations for determining localized information about the electrically active dopant distributions in nanowire structures.
Revised: January 7, 2014 |
Published: October 7, 2013
Citation
Gan Z., D.E. Perea, J. Yoo, S.T. Picraux, D.J. Smith, and M.R. Mccartney. 2013.Mapping Electrostatic Profiles Across Axial p-n Junctions in Si Nanowires using Off-Axis Electron Holography.Applied Physics Letters 103, no. 15:Article No. 153108.PNNL-SA-98430.doi:10.1063/1.4824775