June 1, 2010
Journal Article

Magnetotransport Properties of High Quality Co:ZnO and Mn:ZnO Single Crystal Pulsed Laser Deposition films: Pitfalls Associated with Magnetotransport on High Resistivity Materials

Abstract

The electrical resistivity values for a series of pure and doped (Co, Mn, Al) ZnO epitaxial films grown by pulsed laser deposition were measured with equipment designed for determining the DC resistivity of high resistance samples. Room-temperature resistances ranging from 7x10^1 ohms/square to 4x10^8 ohms/square were measured on vacuum-reduced cobalt-doped ZnO, (Al,Co) co-doped ZnO, pure cobalt-doped ZnO, Mn-doped ZnO, and undoped ZnO. Using a four-point collinear geometry with gold spring-pin contacts, resistivities were measured from 295 to 5 K for resistances of

Revised: August 18, 2014 | Published: June 1, 2010

Citation

McCloy J.S., J.V. Ryan, T.C. Droubay, T.C. Kaspar, S.A. Chambers, and D. Look. 2010. Magnetotransport Properties of High Quality Co:ZnO and Mn:ZnO Single Crystal Pulsed Laser Deposition films: Pitfalls Associated with Magnetotransport on High Resistivity Materials. Review of Scientific Instruments 81, no. 6:Art. No. 063902. PNNL-SA-71740. doi:10.1063/1.3436648