August 1, 2013
Journal Article

Long-Term Evaluation of Temperature Profiles Measured by an Operational Raman Lidar

Abstract

This study investigates the accuracy and calibration stability of temperature profiles derived from an operational Raman lidar over a two-year period from 1 January 2009 through 31 December 2010. The lidar, which uses the rotational Raman technique for temperature measurement, is located at the US Department of Energy’s Atmospheric Radiation Measurement site near Billings, Oklahoma, USA. The lidar performance specifications, data processing algorithms, and the results of several test runs are described. Calibration and overlap correction of the lidar is achieved using simultaneous and collocated radiosonde measurements. Results show that the calibration coefficients exhibit no significant long-term or seasonal variation, but do show a distinct diurnal variation. When the diurnal variation in the calibration is not resolved the lidar temperature bias exhibits a significant diurnal variation. Test runs in which only nighttime radiosonde measurements are used for calibration show that the lidar exhibits a daytime warm bias that is correlated with the strength of the solar background signal. This bias, which reaches a maximum of ~2.4K near solar noon, is reduced through the application of a correction scheme in which the calibration coefficients are parameterized in terms of the solar background signal. Comparison between the corrected lidar temperatures and the non-calibration radiosonde temperatures show a negligibly small median bias of -0.013 K for altitudes below 10 km AGL. The corresponding root-mean-squared difference profile is roughly constant at ~2 K below 6km AGL, and increases to about 4.5 K at 10 km AGL.

Revised: November 10, 2015 | Published: August 1, 2013

Citation

Newsom R.K., D.D. Turner, and J.M. Goldsmith. 2013. Long-Term Evaluation of Temperature Profiles Measured by an Operational Raman Lidar. Journal of Atmospheric and Oceanic Technology 30, no. 8:1616-1634. PNNL-SA-88616. doi:10.1175/JTECH-D-12-00138.1