March 3, 2010
Journal Article

Kinetic lattice Monte Carlo simulations of interdiffusion in strained silicon
germanium alloys

Abstract

Point-defect-mediated diffusion processes are investigated in strained SiGe alloys using kinetic lattice Monte Carlo *KLMC* simulation technique. The KLMC simulator incorporates an augmented lattice domain and includes defect structures, atomistic hopping mechanisms, and the stress dependence of transition rates obtained from density functional theory calculation results. Vacancy-mediated interdiffusion in strained SiGe alloys is analyzed, and the stress effect caused by the induced strain of germanium is quantified separately from that due to germanium-vacancy binding. The results indicate that both effects have substantial impact on interdiffusion. © 2010 American Vacuum Society.

Revised: January 7, 2011 | Published: March 3, 2010

Citation

Chen R., and S.T. Dunham. 2010. "Kinetic lattice Monte Carlo simulations of interdiffusion in strained silicon germanium alloys." Journal of Vacuum Science and Technology B--Microelectronics and Nanometer Structures 28, no. 1:C1G18. doi:10.1116/1.3294704