Gallium nitride has been irradiated to two fluences with energetic Au2? ions at 300 K. Two different damage levels and depth profiles were produced that are characterized by a near-surface peak and a deeper damage saturation state. Thermal annealing at 873 K resulted in disorder recovery only in the near-surface region at low fluence. However, simultaneous irradiation with 5.4 MeV Si2? ions during annealing at 873 K induced significant recovery over the entire damage profile at both low and high fluence. The irradiation-enhanced recovery is primarily attributed to defect-stimulated recovery and epitaxial recrystallization processes due to the creation of mobile Frenkel pairs.
Revised: May 20, 2004 |
Published: July 21, 2003
Citation
Jiang W., and W.J. Weber. 2003.Irradiation-Induced Recovery of Disorder in Gallium Nitride.Applied Physics Letters 83, no. 3:458-460.PNNL-SA-38400.